04/17/01 ? reduced rfi and emi reduced snubbing extensive characterization of recovery parameters hermetic features description hexfred tm diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode hexfred tm v r = 600v i f(av) = 45a t rr = 37ns note: d.c. = 50% rect. wave 1/2 sine wave, 60 hz , p.w. = 8.33 ms HFA45HC60C www.irf.com 1 parameter max. units v r cathode to anode voltage 600 v i f(av) continuous forward current, t c = 80c 45 i fsm single pulse forward current, t c = 25c 225 p d @ t c = 25c maximum power dissipation 104 w t j, t stg operating junction and storage temperature range -55 to +150 c a absolute maximum ratings case style to-258aa (isolated base) anode common anode cathode pd - 20368
2 www.irf.com HFA45HC60C see fig. 2 parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 600 ? ? v i r = 100a electrical characteristics @ t j = 25c (unless otherwise specified) l s series inductance ? 8.7 ? nh measured from anode lead to cathode lead , 6mm ( 0.025 in) from package c t junction capacitance, see fig. 3 ? ? 65 pf v r = 200v i r reverse leakage current ? ? 10 a v r = v r rated see fig. 2 ? ? 1.0 ma v r = v r rated, t j = 125c a/s nc a dynamic recovery characteristics @ t j = 25c (unless otherwise specified) a/s nc a parameter min. typ. max. units test conditions t rr reverse recovery time ? ? 37 ns i f = 1.0a,v r = 30v, di f /dt = 200a/s t rr1 reverse recovery time ? 74 ? ns t j = 25c see fig. t rr2 ? 194 ? t j = 125c 5 i f = 45a i rrm1 peak recovery current ? 7.5 ? t j = 25c see fig. i rrm2 ? 12 ? t j = 125c 6 v r = 480v q rr1 reverse recovery charge ? 270 ? t j = 25c see fig. q rr2 ? 1210 ? t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ? 400 ? t j = 25c see fig. di (rec)m /dt2 during t b ? 100 ? t j = 125c 8 thermal - mechanical characteristics parameter typ. max. u nits r thjc junction-to-case ? 1.2 wt weight 10.9 ? g c/w v f forward voltage ? ? 1.37 i f = 22.5a, t j = -55c see fig. 1 ? ? 1.47 i f = 22.5a, t j = 25c ? ? 1.81 i f = 45a, t j = 25c ? ? 1.37 i f = 22.5a, t j = 125c v
www.irf.com 3 HFA45HC60C fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 0 100 200 300 400 500 600 reverse voltage - v r (v) 10 100 1000 junction capacitance - c t (pf) t j = 25 c 0 100 200 300 400 500 600 reverse voltage - v r (v) 0.01 0.1 1 10 100 1000 reverse current - i r (a) 125 c 75 c 25 c 100 c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 forward voltage drop - v f (v) 1 10 100 instantaneous forward current - i f (a) tj = -55 c tj = 125 c tj = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
4 www.irf.com HFA45HC60C fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt, fig. 6 - typical recovery current vs. di f /dt, 100 1000 di f / dt - ( a / s ) 50 100 150 200 250 t rr - ( ns ) v r = 480v t j = 125 c t j = 25 c i f = 22.5a i f = 90a i f = 45a 100 1000 di f / dt - ( a / s ) 1 10 100 i rrm - ( a ) v r = 480v t j = 125 c t j = 25 c i f = 22.5a i f = 90a i f = 45a 100 1000 di f / dt - ( a / s ) 100 1000 10000 q rr - ( nc ) v r = 480v t j = 125 c t j = 25 c i f = 22.5a i f = 90a i f = 45a 100 1000 di f / dt - ( a / s ) 10 100 1000 10000 di ( rec )m / dt - ( a / s ) v r = 480v t j = 125 c t j = 25 c i f = 22.5a i f = 90a i f = 45a
www.irf.com 5 HFA45HC60C 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/01 case outline and dimensions ? to-258aa 23 1 3x 2x 3.55 [.140] 13.97 [.550] 13.46 [.530] b 0.12 [.005] 1.14 [.045] 0.88 [.035] 6.85 [.270] 6.09 [.240] 21.20 [.835] 20.70 [.815] 17.65 [.695] 17.39 [.685] 4.19 [.165] 3.93 [.155] 0.50 [.020] c a b 0.25 [.010] c 37.00 [1.457] 20.40 [1.197] 17.95 [.707] 17.70 [.697] 19.05 [.750] 12.70 [.500] 1.65 [.065] 1.39 [.055] c 5.08 [.200] a not e s : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. all dime ns ions are s hown in millime t e rs [inche s ]. 3. cont rolling dimens ion: inch. 4. conforms t o jedec out line t o-258aa. pin as s ignme nt s 1 = anode 1 2 = common cathode 3 = anode 2
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